JPH031485Y2 - - Google Patents

Info

Publication number
JPH031485Y2
JPH031485Y2 JP1984125454U JP12545484U JPH031485Y2 JP H031485 Y2 JPH031485 Y2 JP H031485Y2 JP 1984125454 U JP1984125454 U JP 1984125454U JP 12545484 U JP12545484 U JP 12545484U JP H031485 Y2 JPH031485 Y2 JP H031485Y2
Authority
JP
Japan
Prior art keywords
sic
raw material
crystal
control means
seed crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984125454U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6143275U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12545484U priority Critical patent/JPS6143275U/ja
Publication of JPS6143275U publication Critical patent/JPS6143275U/ja
Application granted granted Critical
Publication of JPH031485Y2 publication Critical patent/JPH031485Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP12545484U 1984-08-17 1984-08-17 結晶成長装置 Granted JPS6143275U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12545484U JPS6143275U (ja) 1984-08-17 1984-08-17 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12545484U JPS6143275U (ja) 1984-08-17 1984-08-17 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS6143275U JPS6143275U (ja) 1986-03-20
JPH031485Y2 true JPH031485Y2 (en]) 1991-01-17

Family

ID=30684143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12545484U Granted JPS6143275U (ja) 1984-08-17 1984-08-17 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS6143275U (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62256792A (ja) * 1986-04-30 1987-11-09 Sharp Corp 化合物半導体単結晶の気相成長方法
JPS62283897A (ja) * 1986-05-30 1987-12-09 Sharp Corp 化合物半導体単結晶の気相成長方法
JP4503736B2 (ja) * 1999-08-31 2010-07-14 独立行政法人産業技術総合研究所 単結晶の製造方法およびその装置
JP5210732B2 (ja) * 2008-07-01 2013-06-12 昭和電工株式会社 炭化珪素単結晶成長用容器構造
JP4992965B2 (ja) * 2009-12-25 2012-08-08 株式会社デンソー 炭化珪素単結晶の製造装置
JP2011184208A (ja) * 2010-03-04 2011-09-22 Bridgestone Corp 炭化ケイ素単結晶の製造装置及び炭化ケイ素単結晶の製造方法
JP5327126B2 (ja) * 2010-04-14 2013-10-30 株式会社デンソー 炭化珪素単結晶の製造方法および製造装置
JP2012067012A (ja) * 2012-01-12 2012-04-05 Denso Corp 炭化珪素単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134555A (en) * 1981-02-10 1982-08-19 Fuji Photo Film Co Ltd Method and device for forming thin film
JPS5948792B2 (ja) * 1982-08-17 1984-11-28 工業技術院長 炭化けい素結晶成長法

Also Published As

Publication number Publication date
JPS6143275U (ja) 1986-03-20

Similar Documents

Publication Publication Date Title
KR100651149B1 (ko) 알루미늄 나이트라이드:실리콘카바이드 합금 벌크 단결정의 제조
JPH031485Y2 (en])
CA2346290A1 (en) Production of bulk single crystals of silicon carbide
JPS6357400B2 (en])
EP1803840A3 (en) Method for growing single crystal of silicon carbide
JP4140123B2 (ja) 炭化珪素単結晶の製造方法及び単結晶製造装置
RU99103350A (ru) Монокристаллический карбид кремния и способ его получения
JPH0455397A (ja) α―ＳｉＣ単結晶の製造方法
KR980700460A (ko) 실리콘 탄화물 단결정을 승화 성장시키기 위한 방법 및 장치(process and device for sublimation growing silicon carbide monocrystals)
JPH0788274B2 (ja) ＳｉＣ単結晶の成長方法
JPH01108200A (ja) ＳｉＣインゴツトの製造方法
JP2001192299A (ja) 炭化珪素単結晶の製造方法及び製造装置
JPH0442911Y2 (en])
JPH0645519B2 (ja) ｐ型ＳｉＣ単結晶の成長方法
JP2680617B2 (ja) 炭化ケイ素単結晶の成長方法
EP0284437A3 (en) Iii - v group compound crystal article and process for producing the same
JPS6350393A (ja) ＳｉＣ単結晶の成長方法
IL82033A0 (en) Metalorganic vapor phase epitaxial growth of group ii-vi semiconductor materials
JPH031486Y2 (en])
JPH06298514A (ja) 高純度炭化ケイ素の製造方法
JPS6421074A (en) Method for selectively growing thin metallic film
JPS5380158A (en) Vapor phase growth for compound semiconductor
JPS5510436A (en) Susceptor for vapor phase crystal growth
JPS5373A (en) Vapor growing method for semiconductor single crystal
JPS6379793A (ja) 単結晶の育成方法